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公开(公告)号:US20160126688A1
公开(公告)日:2016-05-05
申请号:US14932315
申请日:2015-11-04
IPC分类号: H01R43/28 , C09D135/04 , C09D5/24
CPC分类号: H01R43/28 , C08F222/32 , C09D4/00 , C09D5/24 , C09D135/04
摘要: A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer includes: cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.