公开(公告)号：US5300791A

公开(公告)日：1994-04-05

申请号：US953659

申请日：1992-09-29

申请人： Tzer-Perng Chen ,  Chin-Yuan Chen ,  Jyi-Ren Deng ,  Ming-Jiunn Jou ,  Biing-Jye Lee ,  Jenn-Yu Kao

发明人： Tzer-Perng Chen ,  Chin-Yuan Chen ,  Jyi-Ren Deng ,  Ming-Jiunn Jou ,  Biing-Jye Lee ,  Jenn-Yu Kao

IPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/30 ,  H01L33/02 ,  H01L33/14

摘要： A light emitting diode is provided with a window layer of ZnSSe semiconductor material having a second conductivity type. The second conductivity type ZnSSe window layer has a low electrical resistivity so that it can be used as a current spreading layer, and a bandgap higher than that of the active layer so that it is transparent to light emitted from the active layers. The second conductivity type ZnSSe window layer can be doped with a donor concentration of more than 10.sup.18 cm.sup.-3. Furthermore, its lattice constant is close to that of the active layers and confining layers so that deterioration in optical characteristic due to lattice mismatch is minimized.

摘要翻译： 发光二极管设置有具有第二导电类型的ZnSSe半导体材料的窗口层。 第二导电型ZnSSe窗层具有低电阻率，使得其可以用作电流扩散层，并且具有比有源层高的带隙，使得其对于从有源层发射的光是透明的。 第二导电型ZnSSe窗口层可以以大于1018cm-3的供体浓度掺杂。 此外，其晶格常数接近有源层和限制层的晶格常数，使得由于晶格失配导致的光学特性的劣化被最小化。