公开(公告)号：US20010023121A1

公开(公告)日：2001-09-20

申请号：US09811638

申请日：2001-03-19

Applicant: U.S. PHILIPS CORPORATION

Inventor： Petrus Maria Meijer ,  Cornelis Adrianus Henricus Antonius Mutsaers

IPC: H01L021/3205 ,  H01L021/4763

CPC classification number: H01L21/76844 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a semiconductor device comprising a substrate (1) comprising for instance silicon with thereon a layer (2, 4) comprising at least organic material which contains a passage (6, 8) to the substrate (1). The passage (6,8) has walls (7, 9) transverse to the layer (2, 4). A metal layer (11) is applied on the substrate (1) in at least that portion which adjoins the passage (8). The organic material forming the walls (7, 9) of the passage (6, 8) is covered with an oxide liner (12), and the passage (6, 8) is filled with a metal (14). According to the invention, a metal liner (13) comprising Ti or Ta is provided between the oxide liner (12) and the metal (14) filling the passage (6, 8). It is achieved by this that the device has a better barrier between the organic material (2, 4) and the interconnection metal (14) and that the organic material (2, 4) has a better protection during the various steps of the process.

Abstract translation: 本发明涉及一种包括衬底（1）的半导体器件，衬底（1）包括例如硅，其上具有至少包含到衬底（1）的通道（6,8）的有机材料的层（2,4））的层。 通道（6,8）具有横向于层（2,4）的壁（7,9）。 至少在与通道（8）相邻的部分中，在基板（1）上施加金属层（11）。 形成通道（6,8）的壁（7,9）的有机材料被氧化物衬垫（12）覆盖，并且通道（6,8）填充有金属（14）。 根据本发明，在氧化物衬垫（12）和填充通道（6,8）的金属（14）之间设置包含Ti或Ta的金属衬垫（13）。 由此实现了该装置在有机材料（2,4）和互连金属（14）之间具有更好的屏障，并且有机材料（2,4）在该工艺的各个步骤期间具有更好的保护。