公开(公告)号：US20040077133A1

公开(公告)日：2004-04-22

申请号：US10685248

申请日：2003-10-14

Applicant: U.S. PHILIPS CORPORATION

Inventor： Stephen Battersby

IPC: H01L021/00

CPC classification number: H01L29/66757 ,  H01L29/78618 ,  H01L29/78633

Abstract: A method of producing a top gate thin-film transistor comprises the steps of forming doped silicon source and drain regions (6a,8a) on an insulating substrate (2) and subjecting the face of the substrate (2) on which the source and drain regions (6a,8a) are formed to plasma treatment to form a doped surface layer. An amorphous silicon layer (12) is formed on the doped surface layer over at least the spacing between the source and drain regions (6a,8a) and an insulated gate structure (14,16) is formed over the amorphous silicon layer (12). Laser annealing of areas of the amorphous silicon layer not shielded by the gate conductor is carried out to form polysilicon portions (12a,12b) having the impurities diffused therein. In the method of the invention, doped silicon source and drain regions underlie the silicon layer to be crystallized using the laser annealing process. It has been found that the laser annealing process can then result in crystallization of the full thickness of the amorphous silicon layer. This results from the similar thermal properties of the doped source and drain regions and the silicon layer defining the main body of the transistor.

Abstract translation: 一种制造顶栅极薄膜晶体管的方法，包括以下步骤：在绝缘衬底（2）上形成掺杂的硅源极和漏极区（6a，8a），并对基底（2）的源极和漏极 形成区域（6a，8a）以进行等离子体处理以形成掺杂表面层。 至少在源极和漏极区域（6a，8a）之间的间隔处，在掺杂表面层上形成非晶硅层（12），并且在非晶硅层（12）之上形成绝缘栅极结构（14,16） 。 进行未被栅极导体屏蔽的非晶硅层的区域的激光退火，以形成其中杂质扩散的多晶硅部分（12a，12b）。 在本发明的方法中，使用激光退火工艺将掺杂的硅源极和漏极区置于待结晶的硅层的下面。 已经发现激光退火过程可以导致非晶硅层的全部厚度的结晶。 这是由于掺杂源极和漏极区域以及限定晶体管主体的硅层的类似的热特性。