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公开(公告)号：US20210025663A1
公开(公告)日：2021-01-28
申请号：US17042365
申请日：2019-03-27
发明人： Yoshiyuki Oya , Tomohiro Shoji , Atsushi Fukumoto , Kouki Nishiyama , Toru Ikeda , Takahiro Shinoda
摘要： An aluminum alloy heat exchanger for an exhaust gas recirculation system, the heat exchanger obtained by brazing: a tube material comprising a core material comprising 0.05 mass % to 1.50 mass % of Si, 0.05 mass % to 3.00 mass % of Cu, and 0.40 mass % to 2.00 mass % of Mn, and a sacrificial anticorrosion material comprising 2.00 mass % to 6.00 mass % of Zn, clad on an inner side surface of the core material; and a fin material comprising a core material comprising 0.05 mass to 1.50 mass % of Si, and 0.40 mass % to 2.00 mass % of Mn, and a brazing material comprising 3.00 mass % to 13.00 mass % of Si, clad on both surfaces of the core material; the heat exchanger having a ratio of a surface area Sb (mm2) of the fin material to a surface area Sa (mm2) of the sacrificial anticorrosion material of less than 200%.
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公开(公告)号：US20210033359A1
公开(公告)日：2021-02-04
申请号：US17043064
申请日：2019-03-27
发明人： Yoshiyuki Oya , Tomohiro Shoji , Atsushi Fukumoto , Kouki Nishiyama , Toru Ikeda , Takahiro Shinoda
摘要： An aluminum alloy heat exchanger for an exhaust gas recirculation system, which is a heat exchanger installed in an exhaust gas recirculation system of an internal combustion engine to cool the exhaust gas comprises a tube provided with a sacrificial anticorrosion material on a side along which the exhaust gas passes, and a fin brazed to the surface side of the sacrificial anticorrosion material of the tube, the fin having a pitting potential higher than the pitting potential of the surface of the sacrificial anticorrosion material of the tube. According to the disclosure, an aluminum alloy heat exchanger for an exhaust gas recirculation system having a long service life with effective function of the sacrificial anticorrosion even under an acidic environment in which an oxide film is weakened as a whole and pitting corrosion is unlikely to occur can be provided.
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公开(公告)号：US20210071970A1
公开(公告)日：2021-03-11
申请号：US17042358
申请日：2019-03-27
发明人： Yoshiyuki Oya , Tomohiro Shoji , Atsushi Fukumoto , Kouki Nishiyama , Toru Ikeda , Takahiro Shinoda
摘要： An aluminum alloy heat exchanger for an exhaust gas recirculation system, obtained by brazing: a tube material comprising at least a core material made of aluminum alloy comprising 0.10 to 1.50% of Si, 0.05 to 3.00% of Cu, and 0.40 to 2.00% of Mn, and a sacrificial anticorrosion material made of aluminum alloy comprising 2.00 to 6.00% of Zn, with a Si content of less than 0.10%, clad on the inner side surface of the core material; and a fin material comprising a core material made of aluminum alloy comprising 0.10 to 1.50% of Si, and 0.40 to 2.00% of Mn, with a Zn content of less than 0.05%, and a brazing material clad on both surfaces of the core material, made of aluminum alloy comprising 3.00 to 13.00% of Si, with a Zn content of less than 0.05%.
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公开(公告)号：US11107691B2
公开(公告)日：2021-08-31
申请号：US16862115
申请日：2020-04-29
申请人： DENSO CORPORATION
发明人： Toru Ikeda , Tomohiko Mori , Narumasa Soejima , Hideya Yamadera
IPC分类号： H01L21/306 , H01L21/311
摘要： A method of manufacturing a semiconductor device is provided, and the method may include: preparing a semiconductor substrate constituted of a group III nitride semiconductor, a main surface of the semiconductor substrate being a c-plane; forming a grove on the main surface by dry dry-etching the main surface; and wet-etching an inner surface of the groove using an etchant to expose the c-plane of the semiconductor substrate in a wet-etched region, the etching having an etching rate to the c-plane of the semiconductor substrate that is lower than the etching rate to a plane other than the c-plane of the semiconductor substrate.
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