公开(公告)号：US20250069858A1

公开(公告)日：2025-02-27

申请号：US18807175

申请日：2024-08-16

Applicant: ULVAC, INC.

Inventor： Kenta DOI ,  Toshiyuki NAKAMURA ,  Yasuhiro MORIKAWA ,  Kensuke AKAZAWA ,  Daisuke HIRONIWA

IPC: H01J37/32 ,  H01J37/09

Abstract: [Object] To provide a plasma processing apparatus capable of expanding an formation region of plasma generated on an upper electrode side to increase the processing speed and a control method therefor.
[Solving Means] A plasma processing apparatus according to an embodiment of the present invention includes a vacuum chamber, a substrate-supporting stage, a counter electrode, and a resonant circuit. The substrate-supporting stage is disposed inside the vacuum chamber and is connected to a first high-frequency power supply circuit that supplies a high-frequency power at a first frequency. The counter electrode is disposed in opposite to the stage and is connected to a second high-frequency power supply circuit that supplies a high-frequency power at a second frequency. The resonant circuit allows high-frequency current at the second frequency from the counter electrode to pass therethrough.