公开(公告)号：US20240304453A1

公开(公告)日：2024-09-12

申请号：US18665377

申请日：2024-05-15

申请人： ULVAC, INC.

发明人： TAICHI SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC分类号： H01L21/3065 ,  B81C1/00 ,  C23C14/02 ,  C23C14/34 ,  H01J37/32 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L21/30655 ,  B81C1/00531 ,  B81C1/00619 ,  C23C14/021 ,  C23C14/34 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/014 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3342

摘要： The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming SixOyαz; wherein a is any one of F, Cl, H, and CkHl; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.

公开(公告)号：US20230420220A1

公开(公告)日：2023-12-28

申请号：US18213228

申请日：2023-06-22

申请人： ULVAC, Inc.

发明人： Taichi SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC分类号： H01J37/32

CPC分类号： H01J37/32174 ,  H01J37/32541 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/334

摘要： A plasma processing apparatus according to the invention includes a chamber, an inner electrode, an outer electrode, a plasma generating power source, and a gas introduction part. The plasma generating power source applies alternating-current power to the outer electrode. The outer electrode includes a first electrode, a second electrode, and a third electrode. The plasma generating power source includes a first high-frequency power source, a second high-frequency power source, and a power splitter. The first high-frequency power source applies alternating-current power having a first frequency λ1 to the first electrode and the second electrode. The second high-frequency power source applies alternating-current power having a second frequency λ2 to the third electrode. A relationship of λ1>λ2 is satisfied. The power splitter is configured to split the alternating-current power into the first electrode and the second electrode with a predetermined split ratio.

公开(公告)号：US20220344167A1

公开(公告)日：2022-10-27

申请号：US17728524

申请日：2022-04-25

申请人： ULVAC, Inc.

发明人： Taichi SUZUKI ,  Yasuhiro MORIKAWA ,  Kenta DOI ,  Toshiyuki NAKAMURA

IPC分类号： H01L21/3065 ,  H01J37/32 ,  B81C1/00 ,  C23C14/34 ,  C23C14/02

摘要： An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.