公开(公告)号：US11049976B2

公开(公告)日：2021-06-29

申请号：US15777081

申请日：2016-11-22

Applicant: ULVAC, INC.

Inventor： Mitsuru Ueno ,  Junya Kiyota ,  Motoshi Kobayashi ,  Masaki Takei ,  Kazutoshi Takahashi ,  Koji Hidaka ,  Yuu Kawagoe ,  Kentarou Takesue ,  Masaru Wada

IPC: H01L29/786 ,  C23C14/08 ,  H01L21/02 ,  C23C14/34 ,  H01L29/66 ,  H01J37/34

Abstract: A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.