公开(公告)号：US12012650B2

公开(公告)日：2024-06-18

申请号：US17597191

申请日：2020-04-27

Applicant: ULVAC, INC.

Inventor： Kentarou Takesue ,  Masaru Wada ,  Kouichi Matsumoto ,  Yuu Kawagoe ,  Motohide Nishimura

IPC: C23C14/34 ,  C04B35/457 ,  C23C14/08

CPC classification number: C23C14/3407 ,  C04B35/457 ,  C23C14/083 ,  C23C14/3414 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293

Abstract: [Object] To provide a sputtering target for producing an oxide semiconductor thin film having high properties, which serves as a substitute for IGZO, and a method of producing the same.
[Solving Means] In order to achieve the above-mentioned object, a sputtering target according to an embodiment of the present invention includes: an oxide sintered body including indium, tin, and germanium, in which an atom ratio of germanium with respect to a total of indium, tin, and germanium is 0.07 or more and 0.40 or less, and an atom ratio of tin with respect to the total of indium, tin, and germanium is 0.04 or more and 0.60 or less. As a result, it is possible to achieve transistor characteristics of having mobility of 10 cm2/Vs or more.