公开(公告)号：US20040050687A1

公开(公告)日：2004-03-18

申请号：US10658460

申请日：2003-09-10

Applicant: ULVAC, INC.

Inventor： Myounggoo Lee ,  Yoshihiro Okamura ,  Kazuyuki Tomizawa ,  Satoru Toyoda ,  Narishi Gonohe

IPC: C23C014/32

CPC classification number: C23C14/345 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3455

Abstract: The present invention provides a bias sputtering film forming process and film forming apparatus that can form a coating film having a good film thickness distribution in a minute coated surface of a complicated shape, such as contact holes, through-holes and wiring grooves, especially for the sidewall portions thereof. To a bias sputtering film forming apparatus provided with a sputtering cathode 4 and a substrate stage 5 holding a target 6 and a substrate 7 facing to each other, respectively, in a vacuum chamber 1 having a sputtering gas inlet 3 and a vacuum exhaust port 2, a power source 9 of a variable output for the substrate stage 5 and a control system 10 are connected. The substrate bias voltage value when the cathode voltage is made set to a predetermined voltage previously, and the target is parted from the substrate by a predetermined distance; and the thickness distribution of the thin film on each surface corresponding to this substrate bias voltage value are stored in the control system 10 as reference data. The substrate bias voltage value to make the film thickness substantially uniform in the film forming of each surface is selected from the reference data to be a bias voltage function that makes this a variable, and the output of the power source is controlled by this function.

Abstract translation: 本发明提供一种偏置溅射成膜方法和成膜装置，其能够在复杂形状的微小涂布表面形成具有良好膜厚分布的涂膜，例如接触孔，通孔和布线槽，特别是用于 其侧壁部分。 在具有溅射阴极4和基板台5的偏压溅射成膜装置中，分别在具有溅射气体入口3和真空排气口2的真空室1中分别保持靶6和相互面对的基板7 连接基板台5的可变输出用电源9和控制系统10。 将阴极电压预先设定为预定电压并将靶从衬底分离预定距离时的衬底偏置电压值; 并且对应于该衬底偏置电压值的每个表面上的薄膜的厚度分布作为参考数据存储在控制系统10中。 从使基准数据成为偏置电压函数的参考数据中选择使每个表面的膜形成膜厚度基本均匀的衬底偏置电压值，并且通过该功能来控制电源的输出。