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1.发明公开公开(公告)号：US20240162230A1
公开(公告)日：2024-05-16
申请号：US18411943
申请日：2024-01-12
Inventor： Kyung Rok Kim , Jae Won Jeong , Young Eun Choi , Woo Seok Kim , Jiwon Chang
IPC: H01L27/092 , H01L29/66 , H01L29/78
CPC classification number: H01L27/0924 , H01L29/66492 , H01L29/7833
Abstract: A transistor device includes a substrate, a fin structure extending on the substrate in a direction parallel to a top surface of the substrate, a source region and a drain region provided at an upper portion of the fin structure, a constant current generating layer provided at a lower portion of the fin structure, a gate insulating film provided on both side surfaces and a top surface of the upper portion of the fin structure, and a gate electrode provided on the gate insulating film, wherein the gate electrode is provided on the fin structure and between the source region and the drain region, the constant current generating layer generates a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.
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Patent Agency Ranking
2.发明申请公开(公告)号：US20220085017A1
公开(公告)日：2022-03-17
申请号：US17419692
申请日：2019-12-16
Inventor： Kyung Rok Kim , Jae Won Jeong , Young Eun Choi , Woo Seok Kim
IPC: H01L27/092 , H01L29/78 , H01L29/66
Abstract: A transistor device includes a substrate, a source region provided on the substrate, a drain region spaced apart from the source region in a direction parallel to a top surface of the substrate, a pair of constant current generating patterns provided in the substrate to be adjacent to the source region and the drain region, respectively, a gate electrode provided on the substrate and between the source region and the drain region, and a gate insulating film interposed between the gate electrode and the substrate, wherein, the pair of constant current generating patterns generate a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.
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3.发明授权公开(公告)号：US12261174B2
公开(公告)日：2025-03-25
申请号：US17419692
申请日：2019-12-16
Inventor： Kyung Rok Kim , Jae Won Jeong , Young Eun Choi , Woo Seok Kim
IPC: H01L27/092 , H01L29/66 , H01L29/78 , H03K19/094
Abstract: A transistor device includes a substrate, a source region provided on the substrate, a drain region spaced apart from the source region in a direction parallel to a top surface of the substrate, a pair of constant current generating patterns provided in the substrate to be adjacent to the source region and the drain region, respectively, a gate electrode provided on the substrate and between the source region and the drain region, and a gate insulating film interposed between the gate electrode and the substrate, wherein, the pair of constant current generating patterns generate a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.
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4.发明授权公开(公告)号：US11908863B2
公开(公告)日：2024-02-20
申请号：US17419700
申请日：2019-12-16
Inventor： Kyung Rok Kim , Jae Won Jeong , Young Eun Choi , Woo Seok Kim , Jiwon Chang
IPC: H01L27/092 , H01L29/66 , H01L29/78
CPC classification number: H01L27/0924 , H01L29/66492 , H01L29/7833
Abstract: A transistor device includes a substrate, a fin structure extending on the substrate in a direction parallel to a top surface of the substrate, a source region and a drain region provided at an upper portion of the fin structure, a constant current generating layer provided at a lower portion of the fin structure, a gate insulating film provided on both side surfaces and a top surface of the upper portion of the fin structure, and a gate electrode provided on the gate insulating film, wherein the gate electrode is provided on the fin structure and between the source region and the drain region, the constant current generating layer generates a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.
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5.发明申请公开(公告)号：US20220085155A1
公开(公告)日：2022-03-17
申请号：US17419676
申请日：2019-12-16
Inventor： Kyung Rok Kim , Jae Won Jeong , Young Eun Choi , Woo Seok Kim
IPC: H01L29/06 , H01L27/092 , H01L21/265
Abstract: A transistor device includes a substrate, a source region provided on the substrate, a drain region in the substrate, spaced apart from the source region in a direction parallel to a top surface of the substrate, a gate electrode provided on the substrate and between the source region and the drain region, a gate insulating film interposed between the gate electrode and the substrate, and a constant current generating layer extending between the source region and the drain region, in the direction parallel to the top surface of the substrate, wherein the constant current generating layer generates a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.
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6.发明申请公开(公告)号：US20220085015A1
公开(公告)日：2022-03-17
申请号：US17419700
申请日：2019-12-16
Inventor： Kyung Rok Kim , Jae Won Jeong , Young Eun Choi , Woo Seok Kim , Jiwon Chang
IPC: H01L27/092 , H01L29/78 , H01L29/66
Abstract: A transistor device includes a substrate, a fin structure extending on the substrate in a direction parallel to a top surface of the substrate, a source region and a drain region provided at an upper portion of the fin structure, a constant current generating layer provided at a lower portion of the fin structure, a gate insulating film provided on both side surfaces and a top surface of the upper portion of the fin structure, and a gate electrode provided on the gate insulating film, wherein the gate electrode is provided on the fin structure and between the source region and the drain region, the constant current generating layer generates a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.
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