公开(公告)号：US20150123197A1

公开(公告)日：2015-05-07

申请号：US14071674

申请日：2013-11-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Shing Chen ,  Wei-Ting Wu ,  Ming-Hui Chang ,  Chao-Chun Ning

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/1083 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Abstract translation: 提供了包括衬底，第二深阱，栅极，源极，漏极和第一掺杂剂区域的横向扩散的金属氧化物半导体器件。 衬底包括具有第一导电类型的第一深阱。 具有第二导电类型的第二深阱设置在第一深孔中。 栅极设置在基板和第一和第二深井的边界上。 具有第二导电类型的源极和漏极分别设置在栅极旁边和第一深阱以及第二深阱的旁边。 具有第一导电类型的第一掺杂区域设置在第二深阱中，其中第一掺杂区域与漏极分离。 此外，还提供了制造所述横向扩散金属氧化物半导体器件的方法。

公开(公告)号：US20160372554A1

公开(公告)日：2016-12-22

申请号：US15252246

申请日：2016-08-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Shing Chen ,  Wei-Ting Wu ,  Ming-Hui Chang ,  Chao-Chun Ning

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/1083 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Abstract translation: 提供了包括衬底，第二深阱，栅极，源极，漏极和第一掺杂剂区域的横向扩散的金属氧化物半导体器件。 衬底包括具有第一导电类型的第一深阱。 具有第二导电类型的第二深阱设置在第一深孔中。 栅极设置在基板和第一和第二深井的边界上。 具有第二导电类型的源极和漏极分别设置在栅极旁边和第一深阱以及第二深阱的旁边。 具有第一导电类型的第一掺杂区域设置在第二深阱中，其中第一掺杂区域与漏极分离。 此外，还提供了制造所述横向扩散金属氧化物半导体器件的方法。

公开(公告)号：US09461166B2

公开(公告)日：2016-10-04

申请号：US14071674

申请日：2013-11-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Shing Chen ,  Wei-Ting Wu ,  Ming-Hui Chang ,  Chao-Chun Ning

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/1083 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.

Abstract translation: 提供了包括衬底，第二深阱，栅极，源极，漏极和第一掺杂剂区域的横向扩散的金属氧化物半导体器件。 衬底包括具有第一导电类型的第一深阱。 具有第二导电类型的第二深阱设置在第一深孔中。 栅极设置在基板和第一和第二深井的边界上。 具有第二导电类型的源极和漏极分别设置在栅极旁边和第一深阱以及第二深阱的旁边。 具有第一导电类型的第一掺杂区域设置在第二深阱中，其中第一掺杂区域与漏极分离。 此外，还提供了制造所述横向扩散金属氧化物半导体器件的方法。

公开(公告)号：US09780171B2

公开(公告)日：2017-10-03

申请号：US15252246

申请日：2016-08-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Shing Chen ,  Wei-Ting Wu ,  Ming-Hui Chang ,  Chao-Chun Ning

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L29/1083 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

Abstract: A lateral-diffused metal oxide semiconductor device including a substrate, a second deep well, a gate, a source, a drain and a first dopant region is provided. The substrate includes a first deep well having a first conductive type. The second deep well having a second conductive type is disposed in the first deep well. The gate is disposed on the substrate and the boundary of the first and the second deep well. The source and the drain having a second conductive type are disposed beside the gate and in the first deep well and the second deep well respectively. The first dopant region having a first conductive type is disposed in the second deep well, wherein the first dopant region is separated from the drain. Moreover, a method for fabricating said lateral-diffused metal oxide semiconductor device is also provided.