公开(公告)号：US20160204158A1

公开(公告)日：2016-07-14

申请号：US14595167

申请日：2015-01-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-En Hsu ,  Chen Jie Gu

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689

Abstract: The present invention relates to a CMOS image sensor device and a method of forming the same. The CMOS image sensor device includes a substrate, a deep trench isolation (DTI), a photodiode, an electrode and an interface region. The DTI and the photodiode are both disposed in the substrate. The electrode is disposed on the DTI. The interface region is formed adjacent to the DTI.

Abstract translation: 本发明涉及CMOS图像传感器装置及其形成方法。 CMOS图像传感器装置包括衬底，深沟槽隔离（DTI），光电二极管，电极和界面区域。 DTI和光电二极管均设置在基板中。 电极设在DTI上。 界面区域与DTI相邻形成。