公开(公告)号：US20230369442A1

公开(公告)日：2023-11-16

申请号：US18226264

申请日：2023-07-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  Wen-Yen Huang ,  Shih-Min Chou ,  Zhen Wu ,  Nien-Ting Ho ,  Chih- Chiang Wu ,  Ti-Bin Chen

IPC: H01L29/49 ,  H01L29/40 ,  H01L27/092

CPC classification number: H01L29/4966 ,  H01L27/092 ,  H01L29/401

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.