公开(公告)号：US11616069B2

公开(公告)日：2023-03-28

申请号：US17073443

申请日：2020-10-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Chia Shih ,  Kuei-Ya Chuang ,  Chuang-Hsin Chueh ,  Ming-Che Tsai ,  Wen-Lin Wang ,  Yi-Chun Teng ,  Ssu-Yin Liu ,  Wan-Chun Liao

IPC: H01L27/11521

Abstract: The present application discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a gate dielectric layer, a floating gate, a first dielectric layer and a control gate. The gate dielectric layer is disposed on the substrate. The floating gate is disposed on the gate dielectric layer and has at least one tip on a top surface of the floating gate. The first dielectric layer is disposed on the floating gate. The control gate is disposed above the first dielectric layer and at least partially overlaps the floating gate.