公开(公告)号：US20240304657A1

公开(公告)日：2024-09-12

申请号：US18128218

申请日：2023-03-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Chun Teng ,  Ming-Che Tsai ,  Ping-Chia Shih ,  Yi-Chang Huang ,  Wen-Lin Wang ,  Yu-Fan Hu ,  Ssu-Yin Liu ,  Yu-Nong Chen ,  Pei-Tsen Shiu ,  Cheng-Tzung Tsai

IPC: H01L27/06

CPC classification number: H01L28/24 ,  H01L27/0629

Abstract: A semiconductor device includes a substrate, a first gate, a plurality of second gates and a resistor. The substrate is defined with an active region and a resistor region. The first gate is disposed in the active region. The first gate has a first length extending along a first direction and a second length extending along a second direction. The plurality of second gates are disposed in the resistor region. Each of the second gates has a third length extending along the first direction and a fourth length extending along the second direction. The first length is equal to the third length, and the second length is equal to the fourth length. The resistor is disposed on the plurality of second gates.

公开(公告)号：US11282799B2

公开(公告)日：2022-03-22

申请号：US16741756

申请日：2020-01-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Lin Wang ,  Ping-Chia Shih ,  Ming-Che Tsai ,  Kuei-Ya Chuang ,  Yi-Chun Teng ,  Po-Hsien Chen ,  Wan-Chun Liao

IPC: H01L23/00 ,  H01L27/088 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522

Abstract: A device for generating a security key includes a substrate, semiconductor units, contact structures, and defects. The semiconductor units are disposed on the substrate. The contact structures are disposed on and connected with the semiconductor units. The defects are disposed in at least a part of the contact structures randomly. A manufacturing method of a device for generating a security key includes the following steps. First semiconductor units are formed on a substrate. First contact structures are formed on the first semiconductor units. The first contact structures are connected with the first semiconductor units, and defects are formed in at least a part of the first contact structures randomly.

公开(公告)号：US11616069B2

公开(公告)日：2023-03-28

申请号：US17073443

申请日：2020-10-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Chia Shih ,  Kuei-Ya Chuang ,  Chuang-Hsin Chueh ,  Ming-Che Tsai ,  Wen-Lin Wang ,  Yi-Chun Teng ,  Ssu-Yin Liu ,  Wan-Chun Liao

IPC: H01L27/11521

Abstract: The present application discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a gate dielectric layer, a floating gate, a first dielectric layer and a control gate. The gate dielectric layer is disposed on the substrate. The floating gate is disposed on the gate dielectric layer and has at least one tip on a top surface of the floating gate. The first dielectric layer is disposed on the floating gate. The control gate is disposed above the first dielectric layer and at least partially overlaps the floating gate.

公开(公告)号：US20210217708A1

公开(公告)日：2021-07-15

申请号：US16741756

申请日：2020-01-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Lin Wang ,  Ping-Chia Shih ,  Ming-Che Tsai ,  Kuei-Ya Chuang ,  Yi-Chun Teng ,  Po-Hsien Chen ,  Wan-Chun Liao

IPC: H01L23/00 ,  H01L27/088 ,  H01L23/522 ,  H01L21/8234 ,  H01L21/768

Abstract: A device for generating a security key includes a substrate, semiconductor units, contact structures, and defects. The semiconductor units are disposed on the substrate. The contact structures are disposed on and connected with the semiconductor units. The defects are disposed in at least a part of the contact structures randomly. A manufacturing method of a device for generating a security key includes the following steps. First semiconductor units are formed on a substrate. First contact structures are formed on the first semiconductor units. The first contact structures are connected with the first semiconductor units, and defects are formed in at least a part of the first contact structures randomly.