公开(公告)号：US09379242B1

公开(公告)日：2016-06-28

申请号：US14723476

申请日：2015-05-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Mon-Sen Lin ,  Yu-Ping Wang ,  Yu-Ting Tseng ,  Hao-Yeh Liu ,  Chun-tsen Lu

IPC: H01L21/4763 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L27/088 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L29/7847 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0886 ,  H01L29/1054 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method of fabricating a fin field effect transistor including providing a substrate having at least one fin structure, a dummy gate, and an internal dielectric layer thereon, removing the dummy gate to form a gate trench on the fin structure, blanketly forming a stress film on the substrate to cover a surface of the gate trench, performing a thermal annealing process, removing the stress film, and forming a metal gate is in the gate trench.

Abstract translation: 一种制造鳍状场效应晶体管的方法，包括：在其上提供具有至少一个鳍结构的衬底，伪栅极和内部电介质层，去除所述虚设栅极以在所述鳍结构上形成栅极沟槽，以覆盖形式施加应力膜 在基板上覆盖栅极沟槽的表面，执行热退火处理，去除应力膜和形成金属栅极在栅极沟槽中。