公开(公告)号：US20230268440A1

公开(公告)日：2023-08-24

申请号：US17700530

申请日：2022-03-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Fang-Yun Liu ,  Chien-Tung Yue ,  Kuo-Liang Yeh ,  Mu-Kai Tsai ,  Jinn-Horng Lai ,  Cheng-Hsiung Chen

IPC: H01L29/78 ,  H01L27/092 ,  H01L23/58

CPC classification number: H01L29/7845 ,  H01L27/092 ,  H01L23/585

Abstract: A semiconductor device includes a substrate, a first transistor disposed on the substrate, a second transistor in proximity to the first transistor on the substrate, at least one interlayer dielectric layer covering the first transistor and the second transistor, a first stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the first transistor, and a second stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the second transistor.