公开(公告)号：US20230260827A1

公开(公告)日：2023-08-17

申请号：US17687692

申请日：2022-03-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Chia Shih ,  Che-Hao Kuo ,  Ssu-Yin Liu ,  Ching-Hua Yeh ,  I-Hsin Sung

IPC: H01L21/762 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3115 ,  H01L23/00

CPC classification number: H01L21/76224 ,  H01L21/32139 ,  H01L21/31144 ,  H01L21/31155 ,  H01L23/573

Abstract: A method for fabricating a physically unclonable function (PUF) device includes the steps of first defining a PUF cell region on a substrate and then performing a process to form a defect on the PUF cell region. Preferably, the formation of the defect could be accomplished by forming a shallow trench isolation (STI) on the substrate, forming a gate material layer on the substrate and the STI, patterning the gate material layer to form a first gate material layer and a second gate material layer, and then forming an epitaxial layer between and connecting the first gate material layer and the second gate material layer.