公开(公告)号：US09633955B1

公开(公告)日：2017-04-25

申请号：US15233926

申请日：2016-08-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jhih-Rong Huang ,  Bin-Siang Tsai

IPC: H01L23/58 ,  H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/562 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/5329

Abstract: A semiconductor IC structure includes a semiconductor substrate, a multi-layered dielectric structure disposed on the semiconductor substrate, a first conductive layer disposed in the multi-layered dielectric structure, and a second conductive layer disposed on the multi-layered dielectric structure. The multi-layered dielectric structure further includes a first dielectric layer disposed on the semiconductor substrate, and a second dielectric layer disposed on the first dielectric layer. A coefficient of thermal expansion (CTE) of the first dielectric layer is larger than zero, and a CTE of the second dielectric layer is smaller than zero.