公开(公告)号：US20140242811A1

公开(公告)日：2014-08-28

申请号：US13778147

申请日：2013-02-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jui-Chen Chang ,  Chen-Kuo Chiang ,  Chin-Fu Lin ,  Chih-Chien Liu

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/28194 ,  H01L29/517

Abstract: An ALD method includes providing a substrate in an ALD reactor, performing a pre-ALD treatment to the substrate in the ALD reactor, and performing one or more ALD cycles to form a dielectric layer on the substrate in the ALD reactor. The pre-ALD treatment includes providing a hydroxylating agent to the substrate in a first duration, and providing a precursor to the substrate in a second duration. Each of the ALD cycles includes providing the hydroxylating agent to the substrate in a third duration, and providing the precursor to the substrate in a fourth duration. The first duration is longer than the third duration.

Abstract translation: ALD方法包括在ALD反应器中提供衬底，对ALD反应器中的衬底进行预ALD处理，以及执行一个或多个ALD循环以在ALD反应器中的衬底上形成电介质层。 前ALD治疗包括在第一持续时间内向基质提供羟化剂，并在第二持续时间内向基质提供前体。 每个ALD循环包括在第三个持续时间内向基质提供羟基化试剂，并在第四个持续时间内向基质提供前体。 第一个时间长于第三个持续时间。