公开(公告)号：US20220068651A1

公开(公告)日：2022-03-03

申请号：US17029021

申请日：2020-09-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： MING THAI CHAI ,  MENG XIE ,  WENBO DING

IPC: H01L21/285 ,  H01L21/02

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a gate structure on a substrate; forming a source/drain region adjacent to the gate structure; performing a first cleaning process; performing a first rapid thermal anneal (RTA) process to remove oxygen cluster in the substrate; forming a metal layer on the source/drain region; and performing a second RTA process to transform the metal layer into a silicide layer.