公开(公告)号：US20200373164A1

公开(公告)日：2020-11-26

申请号：US16417542

申请日：2019-05-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： WEI XU ,  WENBO DING ,  Yu-Yang Chen ,  Wang Xiang

IPC: H01L21/28 ,  H01L27/11563 ,  H01L21/033

Abstract: A method of fabricating a semiconductor device includes forming a memory gate and a hard mask layer on the memory gate, forming a select gate on a sidewall of the memory gate and the hard mask layer, performing a selective oxidation process to form an oxide layer on the hard mask layer and the select gate, wherein a portion of the oxide layer on the select gate is thicker than a portion of the oxide layer on the hard mask layer, and removing the oxide layer on the hard mask layer and the hard mask layer to expose a top surface of the memory gate.

公开(公告)号：US20220068651A1

公开(公告)日：2022-03-03

申请号：US17029021

申请日：2020-09-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： MING THAI CHAI ,  MENG XIE ,  WENBO DING

IPC: H01L21/285 ,  H01L21/02

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a gate structure on a substrate; forming a source/drain region adjacent to the gate structure; performing a first cleaning process; performing a first rapid thermal anneal (RTA) process to remove oxygen cluster in the substrate; forming a metal layer on the source/drain region; and performing a second RTA process to transform the metal layer into a silicide layer.