公开(公告)号：US20240071818A1

公开(公告)日：2024-02-29

申请号：US17950120

申请日：2022-09-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： I-Wei Chi ,  Te-Chang Hsu ,  Yao-Jhan Wang ,  Meng-Yun Wu ,  Chun-Jen Huang

IPC: H01L21/768 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/76829 ,  H01L21/02041 ,  H01L21/02293 ,  H01L21/02529 ,  H01L21/02532 ,  H01L29/66795

Abstract: A semiconductor device and method of fabricating the same include a substrate, a first epitaxial layer, a first protection layer, and a contact etching stop layer. The substrate includes a PMOS transistor region, and the first epitaxial layer is disposed on the substrate, within the PMOS transistor region. The first protection layer is disposed on the first epitaxial layer, covering surfaces of the first epitaxial layer. The contact etching stop layer is disposed on the first protection layer and the substrate, wherein a portion of the first protection layer is exposed from the contact etching stop layer.