公开(公告)号：US20180138284A1

公开(公告)日：2018-05-17

申请号：US15712002

申请日：2017-09-21

申请人： IQE, plc

发明人： Rodney Pelzel ,  Andrew Clark ,  Rytis Dargis ,  Patrick Chin ,  Michael Lebby

IPC分类号： H01L29/51 ,  H01L21/02

CPC分类号： H01L29/511 ,  H01L21/02123 ,  H01L21/02178 ,  H01L21/02293 ,  H01L21/02381 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02521 ,  H01L29/517

摘要： Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.

公开(公告)号：US09929249B1

公开(公告)日：2018-03-27

申请号：US15672794

申请日：2017-08-09

申请人： SK hynix Inc.

发明人： Tae-Hang Ahn ,  Oh-Hyun Kim ,  Seung-Beom Baek

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L29/423 ,  H01L27/108 ,  H01L21/768 ,  H01L21/02

CPC分类号： H01L29/665 ,  H01L21/02293 ,  H01L21/76829 ,  H01L27/10855 ,  H01L27/10876 ,  H01L29/4236

摘要： A method for fabricating a semiconductor device includes: forming a semiconductor structure including a pattern; forming an epitaxial layer having a first dopant concentration in the pattern; forming in-situ an interface layer having a second dopant concentration higher than the first dopant concentration, over the epitaxial layer; forming a metal silicide layer over the interface layer; and forming a metal plug over the metal silicide layer.

公开(公告)号：US20170201073A1

公开(公告)日：2017-07-13

申请号：US15314989

申请日：2015-04-16

申请人： SONY CORPORATION

发明人： NORIYUKI FUTAGAWA ,  TATSUSHI HAMAGUCHI ,  SHOICHIRO IZUMI ,  MASARU KURAMOTO

IPC分类号： H01S5/343 ,  H01S5/183

CPC分类号： H01S5/34333 ,  H01L21/02293 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0334 ,  H01L21/28 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18327 ,  H01S5/18341 ,  H01S5/1835 ,  H01S5/18361 ,  H01S5/2009 ,  H01S5/3201 ,  H01S5/3202 ,  H01S2301/176 ,  H01S2304/04 ,  H01S2304/12

摘要： A light-emitting element includes at least a GaN substrate 11; a first light reflecting layer 41 formed on the GaN substrate 11 and functioning as a selective growth mask layer 44; a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 that are formed on the first light reflecting layer; and a second electrode 32 and a second light reflecting layer 42 that are formed on the second compound semiconductor layer 22. An off angle of the plane orientation of the surface of the GaN substrate 11 is 0.4 degrees or less, the area of the first light reflecting layer 41 is 0.8S0 or less, where S0 represents the area of the GaN substrate 11, and as a bottom layer 41A of the first light reflecting layer, a thermal expansion relaxation film 44 is formed on the GaN substrate 11.

公开(公告)号：US09702054B2

公开(公告)日：2017-07-11

申请号：US14537487

申请日：2014-11-10

申请人： Seoul Semiconductor Co., Ltd.

发明人： Jacob J. Richardson ,  Evan C. O'Hara ,  Daniel Estrada

IPC分类号： C30B7/04 ,  C30B19/00 ,  C30B29/16 ,  C25D7/12 ,  H01L21/02 ,  C30B7/00 ,  C30B29/10 ,  C23C18/12 ,  C23C18/16

CPC分类号： C30B7/04 ,  C23C18/1216 ,  C23C18/1245 ,  C23C18/125 ,  C23C18/1283 ,  C23C18/1651 ,  C25D7/123 ,  C30B7/00 ,  C30B19/00 ,  C30B29/10 ,  C30B29/16 ,  H01L21/02175 ,  H01L21/02282 ,  H01L21/02293 ,  H01L21/02304 ,  H01L21/02307

摘要： A solution deposition method including: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.

公开(公告)号：US20170194468A1

公开(公告)日：2017-07-06

申请号：US15463229

申请日：2017-03-20

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L29/66 ,  H01L21/04 ,  H01L29/45 ,  H01L29/167 ,  H01L21/02 ,  H01L29/16

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

公开(公告)号：US09698254B1

公开(公告)日：2017-07-04

申请号：US15463229

申请日：2017-03-20

申请人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

发明人： Adam L. Friedman ,  Olaf M. T. van 't Erve ,  Connie H. Li ,  Jeremy T. Robinson ,  Berend T. Jonker

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/16 ,  H01L29/45 ,  H01L29/167 ,  H01L21/04

CPC分类号： H01L29/66984 ,  H01L21/02115 ,  H01L21/02227 ,  H01L21/02293 ,  H01L21/02527 ,  H01L21/042 ,  H01L21/043 ,  H01L21/3081 ,  H01L29/1606 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/45

摘要： This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

公开(公告)号：US20170069491A1

公开(公告)日：2017-03-09

申请号：US14845346

申请日：2015-09-04

申请人： international Business Machines Corporation

发明人： Cheng-Wei Cheng ,  Ning Li ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC分类号： H01L21/02 ,  H01L21/3065 ,  H01L21/285 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205

CPC分类号： H01L21/3065 ,  H01L21/02293 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02538 ,  H01L21/2056 ,  H01L21/30612 ,  H01L21/7813

摘要： A method comprises providing a sacrificial release layer on a base substrate; forming a device layer on the sacrificial release layer; depositing a metal stressor layer on the device layer; etching the sacrificial release layer; and using epitaxial lift off to release the device layer and the metal stressor layer from the base substrate.

摘要翻译： 一种方法包括在基底基板上提供牺牲剥离层; 在所述牺牲隔离层上形成器件层; 在器件层上沉积金属应力层; 蚀刻牺牲隔离层; 并且使用外延剥离来从基底衬底释放器件层和金属应力层。

公开(公告)号：US09466479B2

公开(公告)日：2016-10-11

申请号：US13792238

申请日：2013-03-11

申请人： Sulzer Metco AG

发明人： Hans Von Känel

IPC分类号： C30B23/02 ,  H01L21/02 ,  C30B29/38 ,  C30B23/08 ,  C30B25/10 ,  C30B29/40 ,  C30B23/06

CPC分类号： H01L21/02293 ,  C30B23/02 ,  C30B23/06 ,  C30B23/08 ,  C30B25/105 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  Y10T428/266

摘要： A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate holder that may be heated. In a second step, the substrate is heated to a temperature suitable for epitaxial deposition. In a third step, substances are vaporized into vapor particles, such substances including at least one of a list of substances, comprising elemental metals, metal alloys and dopants. In a fourth step, the vapor particles are discharged to the deposition chamber. In a fifth step, a pressure is maintained in the range of 10^−3 to 1 mbar in the deposition chamber by supplying a mixture of gases comprising at least one gas, wherein vapor particles and gas particles propagate diffusively. In a sixth optional step, a magnetic field may be applied to the deposition chamber. In a seventh step, the vapor particles and gas particles are activated by a plasma in direct contact with the sample holder. In an eighth step, vapor particles and gas particles are allowed to react, so as to form a uniform epitaxial layer on the heated substrate by low-energy plasma-enhanced vapor phase epitaxy.

摘要翻译： 化合物半导体层的外延沉积工艺包括几个步骤。 在第一步骤中，基板可移除地附接到可被加热的基板保持器。 在第二步骤中，将衬底加热到​​适于外延沉积的温度。 在第三步骤中，物质被蒸发成蒸汽颗粒，这些物质包括元素列表中的至少一种，包括元素金属，金属合金和掺杂剂。 在第四步骤中，蒸气颗粒被排放到沉积室。 在第五步骤中，通过提供包含至少一种气体的气体的混合物，其中蒸气颗粒和气体颗粒扩散地传播，在沉积室中将压力保持在10 -3 -3 mbar的范围内。 在第六可选步骤中，可以将磁场施加到沉积室。 在第七步骤中，蒸汽颗粒和气体颗粒通过与样品保持器直接接触的等离子体激活。 在第八步骤中，允许蒸气颗粒和气体颗粒反应，以便通过低能量等离子体增强的气相外延在加热的衬底上形成均匀的外延层。

公开(公告)号：US09379215B2

公开(公告)日：2016-06-28

申请号：US14960807

申请日：2015-12-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Ta Lin ,  Chu-Yun Fu ,  Hung-Ming Chen ,  Shu-Tine Yang ,  Shin-Yeh Huang

IPC分类号： H01L29/02 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L27/0886 ,  H01L21/02293 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7855

摘要： A method of fabricating a fin field effect transistor (FinFET) including forming a first insulation region and a second insulation region and fin there between. The method further includes forming a gate stack over a portion of the fin and over a portion of the first and second insulation regions. The method further includes tapering the top surfaces of the first and second insulation regions not covered by the gate stack.

摘要翻译： 一种制造鳍状场效应晶体管（FinFET）的方法，包括形成第一绝缘区域和第二绝缘区域并在其间形成鳍片。 该方法还包括在鳍片的一部分上以及第一和第二绝缘区域的一部分上方形成栅叠层。 该方法还包括使未被栅极堆叠覆盖的第一和第二绝缘区域的顶表面逐渐变细。

公开(公告)号：US20150349059A1

公开(公告)日：2015-12-03

申请号：US14289911

申请日：2014-05-29

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Georgios Vellianitis

IPC分类号： H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/10 ,  H01L21/02063 ,  H01L21/02293 ,  H01L21/02505 ,  H01L21/02639 ,  H01L21/20 ,  H01L21/2022 ,  H01L21/2033 ,  H01L21/2205 ,  H01L29/42392 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/78642

摘要： A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a semiconductor column having a first portion comprising a first material, a second portion comprising a second material, and a third portion comprising a third material, where the second material is different than the first material and the third material. The first portion, the second portion, and the third portion have substantially equal widths. A first abrupt interface exists between a top surface of the first portion and a bottom surface of the second portion, and a second abrupt interface exists between a top surface of the second portion and a bottom surface of the third portion, in an embodiment. In an embodiment, the column forms part of a transistor where the first portions functions as a source or drain, the second portion functions as a channel, and the third portion functions as a drain or source.

摘要翻译： 提供了半导体布置和形成方法。 半导体装置包括具有第一部分的半导体柱，第一部分包括第一材料，第二部分包括第二材料，第三部分包括第三材料，其中第二材料不同于第一材料和第三材料。 第一部分，第二部分和第三部分具有基本相等的宽度。 在一个实施例中，在第一部分的顶表面和第二部分的底表面之间存在第一突然界面，并且在第二部分的顶表面和第三部分的底表面之间存在第二突然界面。 在一个实施例中，列形成晶体管的一部分，其中第一部分用作源极或漏极，第二部分用作沟道，第三部分用作漏极或源极。