公开(公告)号：US08999793B2

公开(公告)日：2015-04-07

申请号：US14306250

申请日：2014-06-17

申请人： United Microelectronics Corp.

发明人： Chin-I Liao ,  Chia-Lin Hsu ,  Ming-Yen Li ,  Yung-Lun Hsieh ,  Chien-Hao Chen ,  Bo-Syuan Lee

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/10

CPC分类号： H01L29/66795 ,  H01L29/1054 ,  H01L29/66484 ,  H01L29/785

摘要： A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from inner to outer. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor.

摘要翻译： 多栅极场效应晶体管包括鳍状结构，栅极结构，至少外延结构和梯度盖层。 鳍状结构位于基板上。 栅极结构设置在鳍状结构和衬底的一部分上。 外延结构位于栅极结构旁边的鳍状结构上。 梯度盖层位于每个外延结构上。 梯度盖层是化合物半导体，化合物半导体的成分之一的浓度具有从内向外减小的梯度分布。 此外，本发明还提供一种形成所述多栅极场效应晶体管的多栅极场效应晶体管工艺。

公开(公告)号：US20140295634A1

公开(公告)日：2014-10-02

申请号：US14306250

申请日：2014-06-17

申请人： UNITED MICROELECTRONICS CORP.

发明人： Chin-I Liao ,  Chia-Lin Hsu ,  Ming-Yen Li ,  Yung-Lun Hsieh ,  Chien-Hao Chen ,  Bo-Syuan Lee

IPC分类号： H01L29/66

CPC分类号： H01L29/66795 ,  H01L29/1054 ,  H01L29/66484 ,  H01L29/785

摘要： A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from inner to outer. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor.

摘要翻译： 多栅极场效应晶体管包括鳍状结构，栅极结构，至少外延结构和梯度盖层。 鳍状结构位于基板上。 栅极结构设置在鳍状结构和衬底的一部分上。 外延结构位于栅极结构旁边的鳍状结构上。 梯度盖层位于每个外延结构上。 梯度盖层是化合物半导体，化合物半导体的成分之一的浓度具有从内向外减小的梯度分布。 此外，本发明还提供一种形成所述多栅极场效应晶体管的多栅极场效应晶体管工艺。