公开(公告)号：US20250053721A1

公开(公告)日：2025-02-13

申请号：US18378633

申请日：2023-10-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zih-Wun Peng ,  Chih-Yueh Li ,  Ya-Ching Cheng ,  Yu-Ying Hu ,  Da-Ching Liao ,  Po-Jen Hsiao

IPC: G06F30/398

Abstract: A method to derive the location and size of oxide spacing area is provided in the present invention, including steps of dividing a tested region into a plurality of grid units, each grid unit consists of a plurality of sub-grid units, calculating a pattern density difference, a minimum row/column pattern density and a row/column pattern density difference of every grid unit based on layout data, and determining a grid unit as where an oxide spacing area locates at when its pattern density difference is greater than a first predetermined value, its minimum row/column pattern density is less than a second predetermined value and its row/column pattern density difference is greater than a third predetermined value.