公开(公告)号：US20250081510A1

公开(公告)日：2025-03-06

申请号：US18950223

申请日：2024-11-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shou-Wan Huang ,  Chun-Hsien Lin

IPC: H01L29/78 ,  H01L27/06 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.

公开(公告)号：US11355639B1

公开(公告)日：2022-06-07

申请号：US17140157

申请日：2021-01-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shou-Wan Huang ,  Chun-Hsien Lin

IPC: H01L29/78 ,  H01L27/06 ,  H01L27/088 ,  H01L29/66 ,  H01L29/06

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to form a first trench; forming a dielectric layer in the first trench to form a double diffusion break (DDB) structure; and forming a first gate structure and a second gate structure on the DDB structure. Preferably, a bottom surface of the first gate structure is lower than a top surface of the first fin-shaped structure.

公开(公告)号：US12191391B2

公开(公告)日：2025-01-07

申请号：US18244892

申请日：2023-09-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shou-Wan Huang ,  Chun-Hsien Lin

IPC: H01L29/78 ,  H01L27/06 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.

公开(公告)号：US20230420564A1

公开(公告)日：2023-12-28

申请号：US18244892

申请日：2023-09-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shou-Wan Huang ,  Chun-Hsien Lin

IPC: H01L29/78 ,  H01L27/088 ,  H01L27/06 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L27/0886 ,  H01L27/0688 ,  H01L29/0649 ,  H01L29/66795

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.

公开(公告)号：US20220181481A1

公开(公告)日：2022-06-09

申请号：US17140157

申请日：2021-01-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shou-Wan Huang ,  Chun-Hsien Lin

IPC: H01L29/78 ,  H01L27/088 ,  H01L27/06 ,  H01L29/06 ,  H01L29/66

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to form a first trench; forming a dielectric layer in the first trench to form a double diffusion break (DDB) structure; and forming a first gate structure and a second gate structure on the DDB structure. Preferably, a bottom surface of the first gate structure is lower than a top surface of the first fin-shaped structure.

公开(公告)号：US11791412B2

公开(公告)日：2023-10-17

申请号：US17706553

申请日：2022-03-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shou-Wan Huang ,  Chun-Hsien Lin

IPC: H01L29/78 ,  H01L27/08 ,  H01L27/088 ,  H01L27/06 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L27/0688 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66795

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.

公开(公告)号：US20220262687A1

公开(公告)日：2022-08-18

申请号：US17737031

申请日：2022-05-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shou-Wan Huang ,  Chun-Hsien Lin

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/66

Abstract: A method for fabricating semiconductor device includes the steps of providing a substrate having a first region and a second region, forming a first fin-shaped structure on the first region, removing part of the first fin-shaped structure to form a first trench, forming a dielectric layer in the first trench to form a double diffusion break (DDB) structure, forming a first gate structure and a second gate structure on the DDB structure as a bottom surface of the first gate structure is lower than a top surface of the first fin-shaped structure, and forming a contact plug between the first gate structure and the second gate structure on the DDB structure.

公开(公告)号：US20220223728A1

公开(公告)日：2022-07-14

申请号：US17706553

申请日：2022-03-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shou-Wan Huang ,  Chun-Hsien Lin

IPC: H01L29/78 ,  H01L27/088 ,  H01L27/06 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes a substrate having a first region and a second region, a first fin-shaped structure extending along a first direction on the first region, a double diffusion break (DDB) structure extending along a second direction to divide the first fin-shaped structure into a first portion and a second portion, and a first gate structure and a second gate structure extending along the second direction on the DDB structure.