公开(公告)号：US20170062279A1

公开(公告)日：2017-03-02

申请号：US14835700

申请日：2015-08-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Sih-Yun Wei ,  Hsueh-Chun Hsiao ,  Tzu-Yun Chang ,  Shih-Yin Hsiao ,  Ching-Chung Yang

IPC: H01L21/8238 ,  H01L21/266 ,  H01L27/092 ,  H01L29/66 ,  H01L21/265 ,  H01L29/167

CPC classification number: H01L21/823807 ,  H01L21/823814 ,  H01L27/0922 ,  H01L29/6659

Abstract: A transistor set forming process includes the following steps. A substrate having a first area and a second area is provided. An implantation process is performed to form a diffusion region of a first transistor in the substrate of the first area and a channel region of a second transistor in the substrate of the second area at the same time.

Abstract translation: 晶体管组形成工艺包括以下步骤。 提供具有第一区域和第二区域的衬底。 执行注入工艺，以在第一区域的衬底中的第一晶体管的扩散区域和第二区域的衬底中的第二晶体管的沟道区域同时形成。