公开(公告)号：US20250040227A1

公开(公告)日：2025-01-30

申请号：US18237401

申请日：2023-08-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Liang Liu ,  Szu-Han Huang

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes a gate structure, an insulating layer and two source/drain regions. A portion of the gate structure is embedded in a substrate. The insulating layer is disposed between the portion of the gate structure and the substrate and encompasses the portion of the gate structure. The two source/drain regions are disposed in the substrate and respectively located at two sides of the gate structure.