公开(公告)号：US20210336133A1

公开(公告)日：2021-10-28

申请号：US17371376

申请日：2021-07-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Jen WANG ,  Chun-Hung CHENG ,  Chuan-Fu WANG

IPC: H01L45/00 ,  H01L27/24

Abstract: A method for forming a resistive random access memory structure. The resistive random access memory structure includes a bottom electrode; a variable resistance layer disposed on the bottom electrode; a top electrode disposed on the variable resistance layer; a protection layer surrounding the variable resistance layer, wherein a top surface of the protection layer and a top surface of the top electrode are coplanar; and an upper interconnect structure disposed on the top electrode, wherein the upper interconnect structure is electrically connected to the top electrode and directly contacts a sidewall of the protection layer.

公开(公告)号：US20210013403A1

公开(公告)日：2021-01-14

申请号：US16504491

申请日：2019-07-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wen-Jen WANG ,  Chun-Hung CHENG ,  Chuan-Fu WANG

IPC: H01L45/00 ,  H01L27/24

Abstract: A resistive random access memory structure includes a bottom electrode; a variable resistance layer disposed on the bottom electrode; a top electrode disposed on the variable resistance layer; a protection layer surrounding the variable resistance layer, wherein a top surface of the protection layer and a top surface of the top electrode are coplanar; and an upper interconnect structure disposed on the top electrode, wherein the upper interconnect structure is electrically connected to the top electrode and directly contacts a sidewall of the protection layer.