公开(公告)号：US08742587B1

公开(公告)日：2014-06-03

申请号：US13680102

申请日：2012-11-18

Applicant: United Microelectronics Corp.

Inventor： Yuh-Min Lin ,  Wen-Ting Chen ,  Yi-Yu Wu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/52 ,  H01L21/768 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal interconnection structure includes a substrate and a protective layer. The substrate includes at least a first conductive layer. The protective layer is a single-layered structure disposed on the substrate, and a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer. A material of the upper part of the protective layer includes silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer includes silicon carbide (SiC) or silicon carbonitride (SiCN).

Abstract translation: 金属互连结构包括基板和保护层。 衬底至少包括第一导电层。 保护层是设置在基板上的单层结构，保护层的上部的氧（O）的量比保护层的下部的氧（O）的量多。 保护层上部的材料包括碳氧化硅（SiCO）或硅碳氮氧化物（SiCNO），保护层下部的材料包括碳化硅（SiC）或碳氮化硅（SiCN）。

公开(公告)号：US20140138830A1

公开(公告)日：2014-05-22

申请号：US13680102

申请日：2012-11-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuh-Min Lin ,  Wen-Ting Chen ,  Yi-Yu Wu

IPC: H01L23/52 ,  H01L21/768

CPC classification number: H01L23/52 ,  H01L21/768 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal interconnection structure includes a substrate and a protective laver. The substrate includes at least a first conductive layer. The protective layer is a single-layered structure disposed on the substrate, and a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer. A material of the upper part of the protective layer includes silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer includes silicon carbide (SiC) or silicon carbonitride (SiCN).

Abstract translation: 金属互连结构包括基底和保护性紫菜。 衬底至少包括第一导电层。 保护层是设置在基板上的单层结构，保护层的上部的氧（O）的量比保护层的下部的氧（O）的量多。 保护层上部的材料包括碳氧化硅（SiCO）或硅碳氮氧化物（SiCNO），保护层下部的材料包括碳化硅（SiC）或碳氮化硅（SiCN）。