公开(公告)号：US20170365510A1

公开(公告)日：2017-12-21

申请号：US15188621

申请日：2016-06-21

Applicant: United Microelectronics Corp.

Inventor： Yi-Yu Wu ,  Bin-Siang Tsai

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/76816 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144

Abstract: A method of forming an opening pattern including the following steps is provided. An ultra low dielectric constant layer, a dielectric hard mask layer and a patterned metal hard mask layer are sequentially formed on a substrate. A portion of the dielectric hard mask layer is removed to form a patterned dielectric hard mask layer by using the patterned metal hard mask layer as a mask. The patterned metal hard mask layer is removed after forming the patterned dielectric hard mask layer. A portion of the ultra low dielectric constant layer is removed to form a first opening by using the patterned dielectric hard mask layer as a mask.

公开(公告)号：US08742587B1

公开(公告)日：2014-06-03

申请号：US13680102

申请日：2012-11-18

Applicant: United Microelectronics Corp.

Inventor： Yuh-Min Lin ,  Wen-Ting Chen ,  Yi-Yu Wu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/52 ,  H01L21/768 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal interconnection structure includes a substrate and a protective layer. The substrate includes at least a first conductive layer. The protective layer is a single-layered structure disposed on the substrate, and a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer. A material of the upper part of the protective layer includes silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer includes silicon carbide (SiC) or silicon carbonitride (SiCN).

Abstract translation: 金属互连结构包括基板和保护层。 衬底至少包括第一导电层。 保护层是设置在基板上的单层结构，保护层的上部的氧（O）的量比保护层的下部的氧（O）的量多。 保护层上部的材料包括碳氧化硅（SiCO）或硅碳氮氧化物（SiCNO），保护层下部的材料包括碳化硅（SiC）或碳氮化硅（SiCN）。

公开(公告)号：US20140138830A1

公开(公告)日：2014-05-22

申请号：US13680102

申请日：2012-11-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuh-Min Lin ,  Wen-Ting Chen ,  Yi-Yu Wu

IPC: H01L23/52 ,  H01L21/768

CPC classification number: H01L23/52 ,  H01L21/768 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal interconnection structure includes a substrate and a protective laver. The substrate includes at least a first conductive layer. The protective layer is a single-layered structure disposed on the substrate, and a quantity of oxygen (O) in an upper part of the protective layer is more than a quantity of oxygen (O) in a lower part of the protective layer. A material of the upper part of the protective layer includes silicon oxycarbide (SiCO) or silicon oxycarbonitride (SiCNO), and a material of the lower part of the protective layer includes silicon carbide (SiC) or silicon carbonitride (SiCN).

Abstract translation: 金属互连结构包括基底和保护性紫菜。 衬底至少包括第一导电层。 保护层是设置在基板上的单层结构，保护层的上部的氧（O）的量比保护层的下部的氧（O）的量多。 保护层上部的材料包括碳氧化硅（SiCO）或硅碳氮氧化物（SiCNO），保护层下部的材料包括碳化硅（SiC）或碳氮化硅（SiCN）。

公开(公告)号：US20180331044A1

公开(公告)日：2018-11-15

申请号：US15624498

申请日：2017-06-15

Applicant: United Microelectronics Corp.

Inventor： Yi-Yu Wu ,  Chun-Yuan Wu ,  Chih-Chien Liu ,  Bin-Siang Tsai

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/53257 ,  H01L21/02068 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53266 ,  H01L23/53295

Abstract: A semiconductor device including a tungsten contact structure formed in a first dielectric layer on a substrate is provided. The tungsten contact structure contains a seam structure. A tungsten oxide layer is formed at least on a sidewall of the seam structure.

公开(公告)号：US09917007B2

公开(公告)日：2018-03-13

申请号：US15188621

申请日：2016-06-21

Applicant: United Microelectronics Corp.

Inventor： Yi-Yu Wu ,  Bin-Siang Tsai

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/033

CPC classification number: H01L21/76816 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144

Abstract: A method of forming an opening pattern including the following steps is provided. An ultra low dielectric constant layer, a dielectric hard mask layer and a patterned metal hard mask layer are sequentially formed on a substrate. A portion of the dielectric hard mask layer is removed to form a patterned dielectric hard mask layer by using the patterned metal hard mask layer as a mask. The patterned metal hard mask layer is removed after forming the patterned dielectric hard mask layer. A portion of the ultra low dielectric constant layer is removed to form a first opening by using the patterned dielectric hard mask layer as a mask.