公开(公告)号：US20240369594A1

公开(公告)日：2024-11-07

申请号：US18204666

申请日：2023-06-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Jen HSIAO ,  Ya-Ching CHENG ,  Chih-Yueh LI ,  Yu-Ying HU ,  Da-Ching LIAO ,  Zih-Wun PENG

IPC: G01Q30/04 ,  H01L21/66

Abstract: A matching method for semiconductor topography measurement and a processing device using the same are provided. The matching method includes the following steps. An original surface topography curve is obtained. The original surface topography curve is obtained by measuring along a measurement straight line path of a semiconductor device. The original surface topography curve is converted into a surface topography variation curve. A circuit layout is obtained. A plurality of conductor density variation curves are obtained along a plurality of layout straight-line paths. According to a plurality of weighted values of a plurality of topography variation observation intervals of the surface topography variation curve, a weighted correlation between the surface topography variation curve and each of the conductor density variation curves is analyzed. According to the weighted correlations, the measurement straight line path matching the original surface topography curve is obtained from the layout straight-line paths.