公开(公告)号：US20190266214A1

公开(公告)日：2019-08-29

申请号：US15905263

申请日：2018-02-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Ching LIAO ,  Li-Chin Wang ,  Ya-Ching Cheng ,  Chien-Hung Chen ,  Chun-Liang Hou

IPC: G06F17/15

Abstract: An analyzing method and an analyzing system for manufacturing data are provided. The analyzing method includes the following steps. A plurality of models each of which has a correlation value representing a relationship between at least one of a plurality of factors and a target parameter are provided. The models are screened according to the correlation values. A rank information and a frequency information of the factors are listed up according to the models. The factors are screened according to the rank information and the frequency information. The models are ranked and at least one of the models is selected.

公开(公告)号：US20240369594A1

公开(公告)日：2024-11-07

申请号：US18204666

申请日：2023-06-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Jen HSIAO ,  Ya-Ching CHENG ,  Chih-Yueh LI ,  Yu-Ying HU ,  Da-Ching LIAO ,  Zih-Wun PENG

IPC: G01Q30/04 ,  H01L21/66

Abstract: A matching method for semiconductor topography measurement and a processing device using the same are provided. The matching method includes the following steps. An original surface topography curve is obtained. The original surface topography curve is obtained by measuring along a measurement straight line path of a semiconductor device. The original surface topography curve is converted into a surface topography variation curve. A circuit layout is obtained. A plurality of conductor density variation curves are obtained along a plurality of layout straight-line paths. According to a plurality of weighted values of a plurality of topography variation observation intervals of the surface topography variation curve, a weighted correlation between the surface topography variation curve and each of the conductor density variation curves is analyzed. According to the weighted correlations, the measurement straight line path matching the original surface topography curve is obtained from the layout straight-line paths.