公开(公告)号：US20150123130A1

公开(公告)日：2015-05-07

申请号：US14072905

申请日：2013-11-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Mei-Chih Liao ,  Yi-Fang Tao ,  Yu-Lin Wang ,  Chung-Yuan Lee

IPC: H01L21/66 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/78 ,  H01L22/34

Abstract: A test key structure is provided. The test key structure comprises at least one semiconductor element. Each of the at least one semiconductor element including a well, a source region, a drain region and a gate. The source region is disposed in the well. The drain region is disposed in the well and separated from the source region. The gate is disposed above the well. The source region, the drain region and the well have the same type of doping.

Abstract translation: 提供测试键结构。 测试键结构包括至少一个半导体元件。 所述至少一个半导体元件中的每一个包括阱，源极区，漏极区和栅极。 源区域设置在井中。 漏极区域设置在阱中并与源极区域分离。 门设在井的上方。 源极区，漏极区和阱具有相同类型的掺杂。