公开(公告)号：US20250151366A1

公开(公告)日：2025-05-08

申请号：US18531679

申请日：2023-12-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zi-Ting Huang ,  Ching-Ling Lin ,  Wen-An Liang

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A method for fabricating semiconductor device includes the steps of first providing a substrate having a core region and an input/output (I/O) region and then forming a first metal gate on the core region and a second metal gate on the I/O region. Preferably, the first metal gate includes a first gate dielectric layer, the second metal gate includes a second gate dielectric layer, the first gate dielectric layer and the second gate dielectric layer having different shapes such that the first gate dielectric layer includes an I-shape and the second gate dielectric layer includes a U-shape.