公开(公告)号：US09262820B2

公开(公告)日：2016-02-16

申请号：US14281881

申请日：2014-05-19

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Te-Hsien Hsieh ,  Ming-Jui Chen ,  Cheng-Te Wang ,  Jing-Yi Lee

IPC: G06K9/00 ,  G06T7/00 ,  G06K9/52

CPC classification number: G06T7/0004 ,  G03F1/36 ,  G03F7/70441 ,  G06K9/52

Abstract: A method for IC design is provided. Firstly, an IC design layout having a main feature with an original margin is received. Then, a first modified margin of the main feature is generated; and a first photolithography simulation procedure of the main feature with the first modified margin is performed to generate a first contour having a plurality of curves. Next, an equation of each of the curves is obtained; each equation of the curves is manipulated to obtain a vertex of each of the curves. After that, a first group of target points are assigned to the original margin. Each of the first group of target points respectively corresponds to one of the vertices. Finally, an optical proximity correction (OPC) procedure is performed by using the first group of target points to generate a second modified margin. An apparatus for IC design is also provided.

Abstract translation: 提供了一种IC设计方法。 首先，接收具有原始余量的主要特征的IC设计布局。 然后，生成主要特征的第一修改边缘; 并且执行具有第一修改余量的主要特征的第一光刻模拟程序以产生具有多个曲线的第一轮廓。 接着，求出各曲线的方程式， 操纵曲线的每个方程以获得每个曲线的顶点。 之后，将第一组目标点分配给原始边距。 第一组目标点中的每一个分别对应于一个顶点。 最后，通过使用第一组目标点来执行光学邻近校正（OPC）过程以产生第二修改余量。 还提供了用于IC设计的装置。