公开(公告)号：US20130302982A1

公开(公告)日：2013-11-14

申请号：US13943782

申请日：2013-07-16

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chun-Hsing TUNG ,  Fei-Tzu LIN

IPC: H01L21/285

CPC classification number: H01L21/28506 ,  C23C14/3407 ,  C23C14/50 ,  C23C14/505 ,  C23C16/458 ,  C23C16/4584 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: A deposition method comprises steps as follows. An apparatus for performing a thin-film deposition process is firstly provided, and the apparatus comprises a cabinet, a substrate carrier and a deposition source. The substrate carrier is disposed in the cabinet and comprises a cover element and a supporting element having a through hole. The deposition source is disposed in the cabinet. A substrate is subsequently disposed on the supporting element in order to make a deposition surface of the substrate exposed from the through hole. The cover element is then engaged with the supporting element to secure the substrate therebetween. Next, a deposition vapor is provided from the deposition source to get in touch with the deposition surface.

Abstract translation: 沉积方法包括以下步骤。 首先提供用于执行薄膜沉积工艺的设备，并且该设备包括机柜，基板载体和沉积源。 衬底载体设置在机壳中，并且包括覆盖元件和具有通孔的支撑元件。 沉积源设置在机柜中。 随后将基板设置在支撑元件上，以使基板的沉积表面从通孔露出。 盖元件然后与支撑元件接合以将基板固定在其间。 接下来，从沉积源提供沉积蒸气以与沉积表面接触。