公开(公告)号：US09852983B1

公开(公告)日：2017-12-26

申请号：US15428137

申请日：2017-02-08

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Dai Yang Lee

IPC: H01L23/525 ,  H01L21/266 ,  H01L21/768 ,  H01L27/112 ,  G11C17/16

CPC classification number: H01L23/5252 ,  G11C17/16 ,  H01L21/266 ,  H01L21/76897 ,  H01L27/11206

Abstract: A fabricating method of an anti-fuse structure, comprising: providing a substrate having a first conductive plug and a second conductive plug separated from the first conductive plug; forming an amorphous silicon layer on the substrate, wherein a portion of the amorphous silicon layer overlapping the first conductive plug is defined as a first region, and a portion of the amorphous silicon layer overlapping the second conductive plug is defined as a second region; performing an implantation process to the first region and the second region, wherein the first region has a higher doping concentration than the second region; forming a titanium nitride layer on the amorphous silicon layer; and patterning the titanium nitride layer and the amorphous silicon layer.