公开(公告)号：US09530783B2

公开(公告)日：2016-12-27

申请号：US14729086

申请日：2015-06-03

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Sung-Bin Lin ,  Wen-Chung Chang

IPC: H01L27/115 ,  H01L29/792

CPC classification number: H01L27/11563 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/792

Abstract: A method for manufacturing a non-volatile memory with SONOS memory cells, which includes steps of: providing a substrate; forming a first gate oxide layer and a first gate conductive layer onto the substrate; forming a MOS transistor gate by executing a photolithography process on the first gate conductive layer, and then forming an ONO structure on the substrate; and forming a second gate conductive layer on the ONO substrate, and then forming a NVM transistor gate by executing a photolithography process on the second gate conductive layer.

Abstract translation: 一种用于制造具有SONOS存储器单元的非易失性存储器的方法，其包括以下步骤：提供衬底; 在所述衬底上形成第一栅极氧化物层和第一栅极导电层; 通过在第一栅极导电层上执行光刻工艺形成MOS晶体管栅极，然后在衬底上形成ONO结构; 以及在ONO衬底上形成第二栅极导电层，然后通过在第二栅极导电层上执行光刻工艺来形成NVM晶体管栅极。