公开(公告)号：US11476212B2

公开(公告)日：2022-10-18

申请号：US17123132

申请日：2020-12-16

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yu-Jie Lin

IPC: H01L23/00

Abstract: Semiconductor apparatus and method for manufacturing semiconductor apparatus are provided. Semiconductor apparatus includes a semiconductor substrate having metal pads, a first passivation layer, a second passivation layer, an under bump metal layer, a stress buffer layer, a copper pillar and a solder structure. First passivation layer is formed on the semiconductor substrate and covers a portion of each metal pad, the first passivation layer has first passivation layer openings to expose a first portion of each metal pad. Second passivation layer is formed on the first passivation layer, the second passivation layer has second passivation layer openings to expose a second portion of each metal pad. Under bump metal layer is formed on the second portion of each metal pad exposed by the second passivation layer opening. Stress buffer layer is formed on the under bump metal layer, and the copper pillar is disposed on the stress buffer layer.

公开(公告)号：US10903179B2

公开(公告)日：2021-01-26

申请号：US16294906

申请日：2019-03-06

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Yu-Jie Lin

IPC: H01L23/00

Abstract: Semiconductor apparatus and method for manufacturing semiconductor apparatus are provided. Semiconductor apparatus includes a semiconductor substrate having metal pads, a first passivation layer, a second passivation layer, an under bump metal layer, a stress buffer layer, a copper pillar and a solder structure. First passivation layer is formed on the semiconductor substrate and covers a portion of each metal pad, the first passivation layer has first passivation layer openings to expose a first portion of each metal pad. Second passivation layer is formed on the first passivation layer, the second passivation layer has second passivation layer openings to expose a second portion of each metal pad. Under bump metal layer is formed on the second portion of each metal pad exposed by the second passivation layer opening. Stress buffer layer is formed on the under bump metal layer, and the copper pillar is disposed on the stress buffer layer.