公开(公告)号：US10720489B2

公开(公告)日：2020-07-21

申请号：US16460400

申请日：2019-07-02

申请人： UNITED SEMICONDUCTOR JAPAN CO., LTD.

发明人： Taiji Ema ,  Nobuhiro Misawa ,  Kazuyuki Kumeno ,  Makoto Yasuda

IPC分类号： H01L27/06 ,  H01L49/02 ,  H01L27/08

摘要： A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration CX. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration CY lower than the concentration CX. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration CX. A sign of a TCR of the second polycrystalline silicon changes at the concentration CY.