公开(公告)号：US09620638B1

公开(公告)日：2017-04-11

申请号：US15253774

申请日：2016-08-31

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Xiaorong Luo ,  Weiwei Ge ,  Junfeng Wu ,  Da Ma ,  Mengshan Lv ,  Linhua Huang ,  Qing Liu ,  Tao Sun

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/7816 ,  H01L29/063 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4238 ,  H01L29/7825 ,  H01L29/7831 ,  H01L29/7835

Abstract: A tri-gate laterally-diffused metal oxide semiconductor (LDMOS), including a substrate, a P-type semiconductor region, a P-type contact region, an N-type source region, a gate dielectric layer, an N-type drift region, a first isolation dielectric layer, an N-type drain region, and a second isolation dielectric layer. The P-type semiconductor region is disposed on one end of an upper surface of the substrate, and the N-type drift region is disposed on another end of the upper surface. The P-type semiconductor region contacts with the N-type drift region. The P-type contact region and the N-type source region are disposed on one side of the P-type semiconductor region which is away from the N-type drift region, and compared with the P-type contact region, the N-type source region is in the vicinity of the N-type drift region.