公开(公告)号：US10340373B2

公开(公告)日：2019-07-02

申请号：US15600795

申请日：2017-05-22

Applicant: University of Electronic Science and Technology of China

Inventor： Xiaorong Luo ,  Gaoqiang Deng ,  Kun Zhou ,  Qing Liu ,  Linhua Huang ,  Tao Sun ,  Bo Zhang

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/74 ,  H01L29/739 ,  H01L29/861

Abstract: The present invention relates to the technical field of the power semiconductor device relates to a reverse conducting insulated gate bipolar transistor (RC-IGBT). The RC-IGBT comprises a P-type region, an N-type emitter region, a P-type body contact region, a dielectric trench, a collector region, and an electrical filed cutting-off region. The beneficial effect of the present invention is that, when compared with traditional RC-IGBT, the IGBT of the present invention can eliminate negative resistance effect and effectively improve the performance of forward and reverse conduction.

公开(公告)号：US09620638B1

公开(公告)日：2017-04-11

申请号：US15253774

申请日：2016-08-31

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Xiaorong Luo ,  Weiwei Ge ,  Junfeng Wu ,  Da Ma ,  Mengshan Lv ,  Linhua Huang ,  Qing Liu ,  Tao Sun

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/7816 ,  H01L29/063 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4238 ,  H01L29/7825 ,  H01L29/7831 ,  H01L29/7835

Abstract: A tri-gate laterally-diffused metal oxide semiconductor (LDMOS), including a substrate, a P-type semiconductor region, a P-type contact region, an N-type source region, a gate dielectric layer, an N-type drift region, a first isolation dielectric layer, an N-type drain region, and a second isolation dielectric layer. The P-type semiconductor region is disposed on one end of an upper surface of the substrate, and the N-type drift region is disposed on another end of the upper surface. The P-type semiconductor region contacts with the N-type drift region. The P-type contact region and the N-type source region are disposed on one side of the P-type semiconductor region which is away from the N-type drift region, and compared with the P-type contact region, the N-type source region is in the vicinity of the N-type drift region.