公开(公告)号：US20250133894A1

公开(公告)日：2025-04-24

申请号：US18920270

申请日：2024-10-18

Applicant: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION

Inventor： Hyeok KIM ,  Swarup BISWAS ,  Yong Ju LEE ,  Hyo Won JANG ,  Se Lim HAN

IPC: H10K30/82 ,  C01G19/00

Abstract: Provided is a transparent indium zinc tin oxide (IZTO) electrode with a PANI:PSS interlayer, wherein the PANI:PSS interlayer is formed on an upper surface of an IZTO film. Accordingly, it is possible to manufacture a transparent IZTO electrode with improved mechanical stability by forming a PANI:PSS interlayer to prevent fractures in the inorganic IZTO layer, thereby significantly improving the retention rate of the initial average visible transmittance (AVT) even after bending cycles and reducing sheet resistance.