公开(公告)号：US20090213654A1

公开(公告)日：2009-08-27

申请号：US12390522

申请日：2009-02-23

Applicant: URI PERLMUTTER ,  OFIR SHALVI

Inventor： URI PERLMUTTER ,  OFIR SHALVI

IPC: G11C16/06 ,  G11C16/00 ,  G11C27/00

CPC classification number: G11C11/5628 ,  G11C27/005 ,  G11C2211/5621

Abstract: A method includes defining a nominal level of a physical quantity to be stored in analog memory cells for representing a given data value. The given data value is written to the cells in first and second groups of the cells, which have respective first and second programming responsiveness such that the second responsiveness is different from the first responsiveness, by applying to the cells in the first and second groups respective, different first and second patterns of programming pulses that are selected so as to cause the cells in the first and second groups to store respective levels of the physical quantity that fall respectively in first and second ranges, such that the first range is higher than and the second range is lower than the nominal level. The given data value is read from the cells at a later time.

Abstract translation: 一种方法包括定义要存储在模拟存储器单元中以表示给定数据值的物理量的标称电平。 将给定数据值写入第一和第二组单元中的单元，其具有相应的第一和第二编程响应性，使得第二响应性与第一响应性不同，通过向第一组和第二组中的单元施加相应的 选择的不同的第一和第二编程脉冲模式，以使得第一和第二组中的单元分别存储分别落在第一和第二范围内的物理量的相应水平，使得第一范围高于和/ 第二范围低于标称水平。 稍后从单元读取给定的数据值。

公开(公告)号：US20090213653A1

公开(公告)日：2009-08-27

申请号：US12388528

申请日：2009-02-19

Applicant: URI PERLMUTTER ,  SHAI WINTER ,  OFIR SHALVI ,  EYAL GURGI ,  NAFTALI SOMMER ,  OREN GOLOV

Inventor： URI PERLMUTTER ,  SHAI WINTER ,  OFIR SHALVI ,  EYAL GURGI ,  NAFTALI SOMMER ,  OREN GOLOV

IPC: G11C16/06 ,  G11C16/00 ,  G11C27/00

CPC classification number: G11C11/5628 ,  G11C27/005 ,  G11C29/00

Abstract: A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse.

Abstract translation: 一种用于在模拟存储单元中进行数据存储的方法包括定义用于在模拟存储器单元中存储数据的多个编程状态。 编程状态表示多于一个位的相应组合，并且对应于存储在存储器单元中的物理量的相应不同级别。 通过向存储器单元施加编程脉冲将数据存储在存储器单元中，编程脉冲使存储单元中存储的物理量的电平在编程状态之间转变，使得给定的转换仅由单个编程脉冲引起。