公开(公告)号：US3706920A

公开(公告)日：1972-12-19

申请号：US3706920D

申请日：1971-03-18

Applicant: US ARMY

Inventor： CALDWELL LARRY V ,  MILLER BRIAN S

IPC: H01J1/312 ,  H01J1/34 ,  H01L3/00 ,  H01L5/00

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J1/34 ,  H01J2201/3425

Abstract: A high efficiency tunnel electron emitter in which a unique emitting layer is applied to the insulator layer of a metalinsulator-emitting layer structure. The emitting layer consists of a low work function material such as cesium that is deposited directly on the insulator layer, a thin layer of a conductive metal that is deposited onto the cesium, and an exposed surface of the conductive metal having a layer of cesium oxide applied thereto to lower the work function. The amount of cesium deposited on the insulator layer is critical and is monitored for the proper amount during deposit.

Abstract translation: 一种高效隧道电子发射器，其中独特的发光层被施加到金属 - 绝缘体发射层结构的绝缘体层。 发光层由直接沉积在绝缘体层上的诸如铯的低功函数材料，沉积在铯上的导电金属薄层以及具有氧化铯层的导电金属的暴露表面组成 施加到其上以降低功函数。 沉积在绝缘体层上的铯的量是关键的，并且在沉积期间被监测适当的量。