公开(公告)号：US20130092452A1

公开(公告)日：2013-04-18

申请号：US13648913

申请日：2012-10-10

Applicant: US SYNTHETIC CORPORATION

Inventor： Debkumar MUKHOPADHYAY ,  Jair J. GONZALEZ

IPC: E21B10/46 ,  B01J3/06 ,  B24D3/06

CPC classification number: C22C26/00 ,  B22F7/062 ,  B22F2999/00 ,  E21B10/46 ,  B22F7/06 ,  C22C1/1036

Abstract: Embodiments relate to polycrystalline diamond compacts (“PDCs”) and methods of manufacturing such PDCs in which an at least partially leached polycrystalline diamond (“PCD”) table is infiltrated with a low viscosity cobalt-based alloy infiltrant. In an embodiment, a method includes forming a PCD table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature (“HPHT”) process. The method includes at least partially leaching the PCD table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached PCD table. The method includes subjecting the at least partially leached PCD table and a substrate to a second HPHT process effective to at least partially infiltrate the at least partially leached PCD table with an alloy infiltrant comprising at least one of a cobalt-based or nickel based alloy infiltrant having a composition at or near a eutectic composition of the alloy infiltrant.

Abstract translation: 实施例涉及多晶金刚石压块（“PDC”）以及制造这样的PDC的方法，其中至少部分浸出的多晶金刚石（“PCD”）工作台用低粘度钴基合金渗透剂渗透。 在一个实施方案中，一种方法包括在第一高压/高温（“HPHT”）方法中在金属溶剂催化剂存在下形成PCD表。 该方法包括至少部分浸出PCD表以从其中除去至少一部分金属 - 溶剂催化剂以形成至少部分浸出的PCD台。 该方法包括使至少部分浸出的PCD台和基板经受有效的至少部分浸渗的PCD工作台的第二HPHT工艺，所述合金渗透剂包含钴基或镍基合金浸渗剂中的至少一种 具有在合金浸润剂的共晶组成处或附近的组成。