公开(公告)号：US20210118738A1

公开(公告)日：2021-04-22

申请号：US17072006

申请日：2020-10-15

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Enrique Jr SARILE ,  Dzafir Bin Mohd SHARIFF ,  Seung Geun PARK ,  Ronnie M. DE VILLA ,  Zhong Hai WANG

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/31

Abstract: A semiconductor package is disclosed. The semiconductor package includes a substrate with a first surface, a second surface and sidewalls. The package also includes backside metallization (BSM) over the second surface of the substrate. The semiconductor package is devoid of metal debris.

公开(公告)号：US20210193522A1

公开(公告)日：2021-06-24

申请号：US17125917

申请日：2020-12-17

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Dzafir Bin Mohd SHARIFF ,  Enrique Jr SARILE ,  Seung Geun PARK

IPC: H01L21/78 ,  H01L21/768 ,  H01L23/544

Abstract: A semiconductor package which is free of metal debris from backside metallization (BSM) is disclosed. The semiconductor package is singulated by performing a saw street open process from the frontside of the wafer and then includes a singulation process using a plasma etch from the backside of the wafer with BSM. The singulation process results in metal debris free packages.